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| Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm s Features q q 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 0.95 High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) 0.95 2.9 -0.05 1 1.90.2 +0.2 3 0.4 -0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2 1.45 +0.2 1.1 -0.1 Ratings -30 -20 -5 -30 200 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO ICEO IEBO hFE* VCE(sat) VBE fT NF Zrb Cre Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10V, IC = -1mA IC = -10mA, IB = -1mA VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 1mA, f = 5MHz VCB = -10V, IE = 1mA, f = 2MHz VCE = -10V, IC = -1mA f = 10.7MHz 150 70 - 0.1 - 0.7 300 2.8 22 1.2 min typ max - 0.1 -100 -10 220 V V MHz dB pF Unit A A A *h FE Rank classification Rank hFE B 70 ~ 140 EB C 110 ~ 220 EC Marking Symbol 0 to 0.1 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 1 Transistor PC -- Ta 240 -30 Ta=25C 200 -25 2SA1022 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) 160 -20 IB=-250A -200A 120 -15 -150A -10 -100A -50A 80 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 40 -5 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE -- IC 120 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=-10V IE=0 f=1MHz Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 5 IC=-1mA f=10.7MHz Ta=25C 4 Forward current transfer ratio hFE 100 Ta=75C 5 80 25C -25C 4 3 60 3 2 40 2 20 1 1 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) fT -- IE 600 VCB=-10V Ta=25C 24 PG -- IC VCE=-10V f=100MHz Ta=25C 5 NF -- IE VCB=-10V f=100MHz Ta=25C 4 Transition frequency fT (MHz) 500 20 400 16 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 3 300 12 2 200 8 100 4 1 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 0 0.1 0.3 1 3 10 Emitter current IE (mA) Collector current IC (mA) Emitter current IE (mA) 2 |
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